pa1900 description the m pa1900 is a switching device which can be driven directly by a 2.5 v power source. the m pa1900 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. features can be driven by a 2.5 v power source low on-state resistance r ds(on)1 = 35 m w max. (v gs = 4.5 v, i d = 3.0 a) r ds(on)2 = 38 m w max. (v gs = 4.0 v, i d = 3.0 a) r ds(on)3 = 45 m w max. (v gs = 2.5 v, i d = 3.0 a) ordering information part number package m pa1900te 6-pin mini mold (thin type) absolute maximum ratings (t a = 25c) drain to source voltage v dss 20 v gate to source voltage v gss 12 v drain current (dc) i d(dc) 5.5 a drain current (pulse) note1 i d(pulse) 22 a total power dissipation p t1 0.2 w total power dissipation note2 p t2 2w channel temperature t ch 150 c storage temperature t stg C55 to +150 c notes 1. pw 10 m s, duty cycle 1 % 2. mounted on fr-4 board, t 5 sec. package drawing (unit : mm) 0.65 0.9 to 1.1 0 to 0.1 0.16 +0.1 C0.06 2.8 0.2 1.5 0.95 123 654 1.9 2.9 0.2 0.32 +0.1 C0.05 0.95 0.65 +0.1 C0.15 1 , 2, 5, 6 : drain 3 : gate 4 : source equivalent circuit source body diode gate protection diode marking: tg gate drain product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v10 m a gate leakage current i gss v gs = 12 v, v ds = 0 v 10 m a gate cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 0.5 0.93 1.5 v forward transfer admittance | y fs |v ds = 10 v, i d = 3.0 a39.2s drain to source on-state resistance r ds(on)1 v gs = 4.5 v, i d = 3.0 a2835m w r ds(on)2 v gs = 4.0 v, i d = 3.0 a2938m w r ds(on)3 v gs = 2.5 v, i d = 3.0 a3745m w input capacitance c iss v ds = 10 v 595 pf output capacitance c oss v gs = 0 v 222 pf reverse transfer capacitance c rss f = 1 mhz 133 pf turn-on delay time t d(on) v dd = 10 v61ns rise time t r i d = 3.0 a 172 ns turn-off delay time t d(off) v gs(on) = 4.0 v 220 ns fall time t f r g = 10 w 293 ns total gate charge q g v ds = 16 v6.7nc gate to source charge q gs i d = 5.5 a1.2nc gate to drain charge q gd v gs = 4.0 v3.1nc diode forward voltage v f(s-d) i f = 5.5 a, v gs = 0 v0.87v test circuit 1 switching time test circuit 2 gate charge pg. r g 0 v gs d.u.t. r l v dd t = 1 s m duty cycle 1 % v gs wave form i d wave form v gs 10 % 90 % v gs(on) 10 % 0 i d 90 % 90 % t d(on) t r t d(off) t f 10 % t r g = 10 w i d 0 t on t off pg. 50 w d.u.t. r l v dd i g = 2 ma h pa1900 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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